Aluminium antimonide (AlSb) is a semiconductor material of the III-V family containing aluminium and antimony. The lattice constant is 0.61 nm. The indirect bandgap is approximately 1.6 eV at 300 K, whereas the direct band gap is 2.22 eV.
Electron mobility is 200 cm²·V−1·s−1 and hole mobility is 400 cm²·V−1·s−1 at 300 K. Refractive index is 3.3 at 2 µm wavelength. The dielectric constant is 10.9 at micrtowave frequencies.
AlSb can be alloyed with other III-V materials to produce the following ternary materials: AlInSb, AlGaSb and AlAsSb.
The references used in this article may be clearer with a different or consistent style of citation, footnoting, or external linking. (September 2007)
Microwave dielectric constant of aluminium antimonide, K Seeger and E Schonherr, Semicond. Sci. Technol. vol. 6 pp. 301-302 (1991) doi:10.1088/0268-1242/6/4/013